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Datasheet TLE6280GP 3-Phase Bridge Driver IC
* Compatible to very low ohmic normal Turn on current level input N-Channel Mosfets Turn off current * Separate input for each MOSFET Supply voltage range * PWM frequency up to 30kHz Gate Voltage * Fulfills specification down to 9V Temperature range supply voltage * Low EMC sensitivity and emission * Separate Source connection for each MOSFET * Adjustable dead time * Adjustable dI/dt limitation * Short circuit protection with adjustable current limitation * Driver undervoltage warning * Reverse polarity protection * Disable function * Input with TTL characteristics * Error flag * Thermal overload warning for driver IC * Shoot through protection * Shoot through option * Integrated bootstrap diodes
Features
Product Summary
IOxx(on) IOxx(off) VVs VGS TJ
0.9 0.85 8...20 10 -40...+150
A A V V C
P-DSO36-12
Ordering Code
Q67007-A9406
Application
* Dedicated for 3-phase high current motor bridges in PWM control mode. This device fulfills requirements in 12V automotive applications
General Description
3-phase bridge driver IC for MOSFET power stages with multiple protection functions.
Block Diagram
CL CH VDH
BH1 GH1 SH1 BL1 GL1 SL1
HS Driver 1
LS Driver 1
VS
Reverse Polarity Protection
Voltage Regulator Charge Pump
BH2
HS Driver (Channel 2) ILx IHx MFP DT Input Logic
- Shoot Through Protection - Shoot Through Option - Charge Pump Control - Programmable Dead Time - Short Circuit Protection - Undervoltage Detection - DI/dt Control
GH2
BL2 SH2 LS Driver (Channel 2) Error Logic
ERR
- Short Circuit Shut Down - Under Voltage Warning - Over Temperature Warning
- Short Circuit Protection - Undervoltage Detection - DI/dt Control
GL2
SL2 DIDT GND DI/dt Limitation
HS Driver 3 LS Driver 3
BH3
GH3
SH3
BL3
GL3
SL3
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Datasheet TLE6280GP
Application Block Diagram
VS=12V RVS 10 CDI/DT 12nF CVS 1F RQ 50 k VS DI/DT VDH BH1 RDI/DT 100
C 1000F P-GND
V5=5V
VCC
CBH1 220nF
ERR
GH1 SH1 BH2 CBH2 220nF
RQ 20 k GH2 MFP SH2 RQ 82 k BH3 CBH3 220nF
TLE6280GP
GH3 IL1 IH1 C IL2 IH2 IL3 IH3 CH CCP 1.5F CL GL3 DT SL3 RDT 50 k BL2 GL2 SL2 BH3 CBL3 220nF GL1 SL1 CBL2 220nF SH3 BL1 CBL1 220nF
GND
GND
P-GND
Fig. 1 : Application circuit Remark: This application diagram is one possible implementation of this driver IC. There is, e.g., the possibility to link all three BLx pins and use only one capacitor.
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Datasheet TLE6280GP
Pin 1;18;19:36 8 20 21 9 11 13 10 12 14 15 Symbol GND VS CL CH IH1 IH2 IH3 IL1 IL2 IL3 MFP Multi function pin: a) Disable the complete device by VMFP<1V b) Program pin for output voltage level under short circuit condition (VGxx -VSxx = 2xVMFP) c) Enable shoot through option by VMFP>4.5V 17 35 34 16 2 28 22 5 31 25 3 29 23 6 32 26 4 30 24 7 33 27 DT DIDT VDH ERR BH1 BH2 BH3 BL1 BL2 BL3 GH1 GH2 GH3 GL1 GL2 GL3 SH1 SH2 SH3 SL1 SL2 SL3 Connection to source low-side switches 1 to 3 Connection to source high-side switches 1 to 3 Output to gate low-side switches 1 to 3 Output to gate high-side switches 1 to 3 Backup capacitor connection low switches 1 to 3 Program pin for dead time Program pin dI/dt limitation Sense pin for drain voltage of the high-side Mosfets Error flag for driver supply under voltage, overtemperature and short circuit (open drain output) Bootstrap supply high-side switches 1 to 3 Control inputs for low-side switches 1 to 3 (high active) Control inputs for high-side switches 1 to 3 (low active) Function Logic Ground Voltage supply Charge pump - capacitor
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Datasheet TLE6280GP
Functional description
General In the automotive sector there are more and more applications requiring high performance motor drives, such as electro-hydraulic or electric power steering. In these applications 3-phase motors, synchronous and asynchronous, are used, combining high output performance, low space requirements and high reliability. The TLE6280GP is a driver IC dedicated to control the 6 to 12 external Mosfets forming the converter for high current 3 phase motor drives in the automotive sector. It incorporates features like short circuit detection, diagnosis and high output performance and combines it with typical automotive specific requirements like full functionality even at low battery voltages. Its 3 high-side and 3 low-side output stages are powerful enough to drive Mosfets with 250nC gate charge with approx. 300ns fall and rise times. Typical applications are cooling fan, water pump, electro-hydraulic and electric power steering. The TLE6280GP is designed for a 12V power net. Use in 24V application is possible as well. Limiting factor could be the power dissipation. This datasheet describes all functionality of this device. Additional application tips are given in an application note available on the Internet. Output stages The 3 low-side and 3 high-side powerful push-pull output stages are all floating blocks, each with its own Source pin. This allows the direct connection of the output stage to the Source of each single Mosfet, allowing a perfect control of each Gate-Source voltage even when 200A are driven in the bridge with rise and fall times clearly below 1s. All 6 output stages have the same output power and, due to the use of the bootstrap principle, they can be switched all up to 30kHz. Its output stages are powerful enough to drive Mosfets with 250nC gate charge with approx. 300ns fall and rise times, or even to run 12 such Mosfets with fall and rise times of approx. 600ns. Maximum allowed power dissipation and the need to refresh the bootstrap capacitors with a minimum refresh pulse limit the divice use for higher frequencies. Fig. 2 shows the supply structure of TLE6280GP. The bootstrap capacitors are charged by the charge pump capacitor CCP via the CH pin and diodes. The exact value for this minimum refresh pulse is given by the RC time constant formed by the impedance between the CH pin and Bxx pin, and the capacitor formed by the external Mosfet (CMosfet=QGate-total / VGS). The size of the bootstrap capacitor has to be adapted to the external Mosfet that the driver IC has to drive. Usually the bootstrap capacitor is about 10-20 times bigger than CMosfet. External components, such as R-C networks, at the Vs Pin have to be considered, too. Operation at Vs<12V - integrated charge pump The TLE6280GP provides a feature tailored to the requirements of 12V automotive applications. Often the operation of an application has to be assured even at 9V-supply voltage or lower. Normally bridge driver ICs provide in such conditions clearly less than 9V to the Gate of the external Mosfet, increasing its RDSon and associated the power dissipation. The supply structure of the device is shown in fig.2. The TLE 6280GP has a built-in voltage regulator with charge pump control to generate an internal supply voltage of 13V within a supply voltage range of 8-40V. Operation below 8V is possible as well and will result in a reduced Gate voltage. The charge pump works with an external capacitor CCP connected between the CL and CH pins. It provides more than 13V at the CH pin and guarantees high supply voltage for the bootstrap capacitors CBx. The Input Low-side pins ILx (see Fig. 3) trigger the charge pump. As soon as the first external low-side Mosfet is switched on and the corresponding bootstrap capacitor is connected to GND, the CCP is pushed to high and provides about 13V at the CH pin. CCP can now di4 2004-03-31
Datasheet TLE6280GP
RVS
VS from battery BH 2
Vreg1 13V +13 ... +8V
CH
BH 1
CBH1
CVS
CCP
BH 3
Phase A Phase B Phase C
BL 1 BL 2
CL
Triggered by ILx
Vreg3 = Vreg1-8V = Pin Bold line = external component
Vreg2=6V
BL 3
CBL1
Fig. 2: Supply structure with external components (compare to Fig. 1)
rectly feed the low-side output stages and recharge the bootstrap capacitors connected to GND. As soon as the first of the 3 external low-side Mosfets is switched off, the CCP will be pulled down to be re-charged. This synchronous operation with the output stages has the benefit that the electromagnetic emissions generated by the charge pump can be filtered by the same filter necessary to filter the EME of the converter itself. At the same time it is assured that the high voltage at the CH pin is available just in time to charge the high-side bootstrap.
! Timing of charge pump - Examples 1
IL1 IL2 IL3 CH 1. ILx high 1. ILx low Charge of charge pump capacitor Charge of bootstrap capacitors Charge of bootstrap capacitors
2
IL1 IL2 IL3 CH 1. ILx high 1. ILx low
Charge of charge pump capacitor
Fig. 3: Trigger timing of charge pump caused by changing input signals
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Datasheet TLE6280GP
The size of the CBxx and CCP capacitors depends upon the gate charge of the Mosfet. (See "output stages"). CCP is usually 6 times larger then CBxx. Dead Time and Shoot through option. In bridge applications it has to be assured that the external high-side and low-side Mosfets are not "on" at the same time, such that the battery voltage is directly connected to GND. This is usually assured by the integration of delays in a driver IC, generating a so-called dead time between switching off the external Mosfet and switching on the other Mosfet of the same half-bridge. The dead times generated in the TLE6280GP are adjustable. The dead time generated by the TLE6280GP can be varied from 100ns to 4s by connecting an external resistor from the DT pin to GND. The dead time has to be long enough to avoid a short between battery and GND, while the dead time should be as short as possible to reduce extra power dissipation in the external Mosfets. In addition to this adjustable delay, the TLE6280GP provides a locking mechanism, preventing both external Mosfets of one half-bridge from being switched on at the same time. This functionality is called shoot through protection. If the command to switch on both high and low-side switches in the same half-bridge is given at the input pins, the command will be ignored. (See dead time diagrams, fig. 6-8) This shoot through protection can be deactivated by setting the MFP-pin to 5V. Short circuit protection / current limitation The TLE6280GP provides a short circuit protection for the external Mosfets, by monitoring the Drain-Source voltage of the external Mosfets. As soon as this voltage is higher than the short circuit detection limit, the Gate-Source voltage of this Mosfet will be limited to twice the voltage at the MFP-Pin, providing a current limitation. The short circuit detection level is dependent upon the voltage of the MFP pin as well (see diagrams). After a delay of about 11s all external Mosfets will be switched off until the driver is reset by the MFP pin. The error flag is set. The Drain-Source voltage monitoring of the short circuit detection for certain external Mosfets is active as soon as the corresponding input is set to "on" and the dead time is expired. This feature provides a 2-step switch-on behavior for each regular switching-on of a Mosfet. Description of MFP pin (Multi functional pin) The MFP pin has multiple tasks: 1) Reset the device. 2) Adjust the short circuit detection level of the external Mosfet and define the gate voltage limitation for current limitation in case of short circuit 3) Deactivate the shoot-through protection Fig 4. shows the internal structure of the MFP pin. Condition of MFP pin 0 - 1.1V 2.5 - 4.0 V > 4.5V Function Disable the driver. All external Mosfets will be actively switched off Adjustable short circuit detection level combined with adjustable gate voltage limitation for current limitation. Shootthrough protection is active. Shoot-through protection deactivated.
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Datasheet TLE6280GP
&
ILx
NAND
IHx
&
4.5V
Shoot Through
MFP
Vmfp x 2 Levelshifter
Gate control
Dissable = Reset 1.45 / 1.7V 80ns
Fig. 4: Block diagram of internal structure of MFP pin
Shoot through protection / option As already mentioned, the device has a built-in shoot-through protection, to avoid a simultaneous activation of high- and low-side switch in one half-bridge. In case there is a short circuit in the bridge, the driver will switch off all external Mosfets. If there is still current flowing in the motor, it is possible for the user to override this shoot through protection. By setting the ILx to "high", the IHx to "low" and MFP to a level above 4.5V, all external Mosfets will be turned on simultaneously to blow a well-dimensioned fuse. The application will be finally disconnected in this way from battery, and thus guarantee that the motor does not apply any uncontrolled torque. Undervoltage warning: If the voltage of a bootstrap capacitor CBxx reaches the undervoltage warning level the error flag is set and will remain set until the voltage of the bootstrap capacitor has recovered. The error signal can be seen as awarning that an undervoltage shut-down could occur soon, and the user can take appropriate measures to avoid this. Such measures could be the change of the duty cycle to a range of 10-90% or the ramp down of the motor. Undervoltage shut down: The TLE6280GP has an integrated undervoltage shut-down, to guarantee that the behavior of the device is predictable in all voltage ranges. If the voltage of a bootstrap capacitor CBxx reaches the undervoltage shut-down level, the Gate-Source voltage of the affected external Mosfet will be actively pulled to low. In this situation the short circuit detection of this output stage is deactivated to avoid a complete shut down of the driver. This allows continued operation of the motor in case of undervoltage shut-down for a short period of time. 7 2004-03-31
Datasheet TLE6280GP
As soon as the bootstrap voltage recovers, the output stage condition will be aligned to the input patterns by the next changing input signal at the corresponding input pin. Diagnosis The ERR pin is an open collector output and has to be pulled up with external pull-up resistors to 5V. In normal conditions the ERR signal is high. In case of an error the ERR pin is pulled down. There are 3 different causes for an error signal: 1) Short circuit of an external Mosfet - all external Mosfets are switched off. The driver has to be reset to start again. 2) Undervoltage warning: at least one of the external capacitors connected to Bxx pins has a voltage below the warning level. 3) Over-temperature warning: The device works normally but is out of the maximum ratings. Immediate actions have to be taken to reduce the thermal load. The error flag will be removed when the driver reached temperatures below the over temperature warning level.
Temperature Sensor
ERR
I undervoltage
OR
approx. 1s
Iscp (VMFP) 3.3A 0.3A
10pF
Fig. 5: Block diagram of ERR functionality
dI/dt control In all high current PWM applications, transient overvoltages and electro-magnetic emmisions are critical items. The dI/dt regulation of the TLE6280GP helps to reduce transient overvoltage as well as electro-magnetic emissions. Each real bridge configuration has stray inductance in each half-bridge. When the Mosfets in the bridge are switching and load current is flowing, the stray inductance together with the dI/dt in the halfbridge causies transient overvoltages. These transient overvoltages can be feed to the DIDT pin of the gate driver by a high pass filter. Voltages exceeding 2 to 5V or -2 to -5V at this pin will strongly reduce the gate current of the actually switched Mosfet, resulting in an increased switching time in the Miller plateau of the Mosfet, and reducing the switching speed exactly and only in the critical area of the switching process. Through this regulation over-voltages are reduced and a smoother dI/dt in the bridge is obtained. For more detailed information please refer to application note. Estimation of power dissipation within the driver IC
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Datasheet TLE6280GP
The power dissipation within the driver IC is strongly dependent upon the use of the driver and the external components. Nevertheless, a rough estimation of the worst case power dissipation is possible. Worst case calculation is: PD = (Qgate*n*const* fPWM + IVS(open)) * VVs - PRGate With: PD = Power dissipation in the driver IC fPWM = Switching frequency Qgate = Total gate charge of used MOSFET at 10V VGS n = number of switched Mosfets const = constant considering some leakage current in the driver and the power dissipation caused by the charge pump (nominally = 2) IVS(open) = Current consumption of driver without connected Mosfets during switching VVS = Voltage at Vs PRGate = Power dissipation in the external gate resistors This value can be reduced dramatically by the use of external gate resistors. Recommended start up procedure To assure the driver to be active and functional, a special initialization procedure is required whenever the gate drive is enabled (VMFP is changed from LO to HI). Every time the driver is enabled, after 10s or later, positive-going transition signals at all ILx pins are required in order to ensure proper start-up of the output driver. This procedure assures a proper wake up the device and allowes to fill the bootstrap capacitors. Not filling the bootstrap capacitors might lead to low Gate-Source voltages mainly in highside and can cause a short circuit detection when the highside switches are activated. Not changing the ILx input signal after enabling the device may cause the lowside outputs to stay in off conditions.
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Datasheet TLE6280GP
Maximum ratings
Parameter and Conditions
at Tj = -40 ... +150 C, unless otherwise specified
Symbol
Values
Unit
Supply voltage 1 Operating temperature range Storage temperature range Max. voltage range at Ixx, MFP, DT; ERR Max. voltage range at SLx2 Max. voltage range at SHx3 Max. voltage range at GLx2 Max. voltage range at GHx Max. voltage range at BHx
3
VS Tj Tstg VSLx VSHx VGLx VGHx
-4 ... 45V -40 ...+150 -55 ...+150 -0.3 ...+7 -7 ...+7 -7 ...+45 -7 ...+18
V C V V V V V
-7 ...+55
3
VBHx -0.3 ...+55 VVDH VBxx-VSxx VGxx-VSxx VCL VCH VDIDT Ptot VESD -4 ...+55 -0.3 ...+15 -0.3...+11 -0.3 ...+10 -0.3 ...+18 -7 ...+7 1.2
V V V V V V V W kV
Max. voltage range at VDH
4
Max. voltage difference Bxx - Sxx Max. voltage difference Gxx - Sxx Max. voltage range at CL Max. voltage range at CH Max. voltage range at DIDT Power dissipation (DC) @ TC=125C ESD voltage (Human Body Model) JESD22-A114-B @ all pins @ all pins excluding Gxx DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Jedec Level Thermal resistance junction-case
1 2 E 40/150/56 3 RthJC 5 K/W
With external resistor (10 ) and capacitor - see fig.1 The min value -7V is reduced to -(Vs - 0.5V) if Vs<7.5V 3 The min value -7V is reduced to -(VBHx-VSHx-1V) if bootstrap voltages <8V 4 The min value -4V is increased to -( VBHx - VSHx) if bootstrap voltages <4V
1 2
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Datasheet TLE6280GP
Functional range
Parameter and Conditions
at Tj = -40 ... +150 C, unless otherwise specified
Symbol
Values
Unit
Supply voltage567 Operating temperature range Duty Cycle @ 20kHz678 Vs>8V Max. voltage range at Ixx, ERR Max. voltage range at MFP, DT9 Max. voltage range at SLx2 Max. voltage range at SHx3 Max. voltage range at GLx2 Max. voltage range at GHx3 Max. voltage range at BHx3 Max. voltage range at VDH4 Max. voltage difference Bxx - Sxx Max. voltage difference Gxx - Sxx Max. voltage range at DIDT PWM frequency10 Min. dead time resistor
VS Tj dc VIxx; VERR VMFP VSLx VSHx VGLx VGHx VBHx VVDH VBxx-VSxx VGxx-VSxx VDIDT FPWM RDT
8 ... 20 -40 ...+150 0...95 -0.3 ...+7 -0.3 ...+5 -7 ...+7 -7 ...+45 -7 ...+18 -7 ...+55 -0.3 ...+55 -4 ...+55 -0.3 ...+15 -0.3...+11 -7 ...+7 2...50 0
V C % V V V V V V V V V V V kHz k
5 6
operation above 20V limited by max allowed power dissipation and max. ratings If all 3 half-bridges are switched with fPWM and a duty cycle <10%, undervoltage shut down can occur below Vs=9.5V 7 Total gate charge of the attached Mosfet < 250nC 8 If the bootstrap capacitor is charged to VBHx-VSHx=12V, the maximum duty cycle is 100% for 500 s 9 VMFP up to 7V allowed up to 500ms 10 Limited only by the minimum bootstrap voltage (undervoltage logout of output stage) and the max allowed power dissipation
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Datasheet TLE6280GP
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 C, unless otherwise specified and supply voltage range VS = 8 ... 20V; fPWM = 20kHz
Symbol
Values min typ max
Unit
Static Characteristics Low level output voltage (VGxx-VSxx) @ I=10mA High level output voltage (VGxx-VSxx) 7 @ I=-10mA Supply current at VS (device disabled) @ Vbat=VS=14V RDT=400k VMFP=0V Supply current at VS @ 20kHz VMFP4V (Outputs open) Low level input voltage High level input voltage Input hysteresis
VLL VHL
IVS(dis) IVS(open) VIN(LL) VIN(HL)
-8 ---2.0
50 10 -19 --200
100 11 12 28 1.0 --
mV V mA m V V mV
VIN
Dynamic characteristics Turn on current @ VGxx -VSxx = 0V; Tj=25C @ VGxx -VSxx = 4V; Tj=125C Turn off current @ VGxx -VSxx = 10V; Tj=25C @ VGxx -VSxx = 4V; Tj=125C Dead time (adjustable) @ RDT = 10 k @ RDT = 50 k @ RDT = 200 k @ RDT = 400 k @ RDT > 1 M Dead time @ RDT = 0 k @ TJ = -40C @ TJ = +25C @ TJ = +150C Rise time @ CLoad=22nF; RLoad=1; 20...80% VCLoad @ TJ = -40C @ TJ = +25C @ TJ = +150C Fall time @ CLoad=22nF; RLoad=1; 20...80% VCLoad @ TJ = -40C @ TJ = +25C @ TJ = +150C
IGxx(on) IOxx(off) tDT
----0.16 ----20 25 45
0.93 0.95 0.85 0.55 0.25 1.2 3.9 4.1 2.2 55 70 110 310 250 170
----0.35 ----125 130 200
s
tDT
ns
t rise ---tfall ---220 250 200 400 350 350 700 600 600
ns
ns
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Datasheet TLE6280GP
Electrical Characteristics (continued)
Parameter and Conditions
at Tj = -40 ... +150 C, unless otherwise specified and supply voltage range VS = 8 ... 20V; fPWM = 20kHz
Symbol
Values min typ max
Unit
Dynamic characteristics (continued) Disable propagation time Wake up time after enabling the device Input propagation time (low on) Input propagation time (low off) Input propagation time (high on) Input propagation time (high off) Input propagation time difference (all channels turn on) Input propagation time difference (all channels turn off) Input propagation time difference (one channel; high off - low on) Input propagation time difference (one channel; low off - high on) Input propagation time difference (all channels; high off - low on) Input propagation time difference (all channels; low off - high on) DC-Resistance between CH and Bxx pin ICH-Bxx = 50mA; VVS = VBxx = GND = 0V @ TJ = -40C @ TJ = +25C @ TJ = +150C Boostrap diode forward voltage ICH-Bxx = 50mA @ TJ = -40C @ TJ = +25C @ TJ = +150C
tP(DIS) tWU tP(ILN) tP(ILF) tP(IHN) tP(IHF) tPD(an) tPD(af) tPD(1hfln) tPD(1lfhn) tPD(ahfln) tPD(alfhn) RCH-Bxx
-----20 -------
350 220 180 250 185 55 11 60 80 60 80
700 10 500 500 500 500 70 50 150 150 150 150
ns s ns ns ns ns ns ns ns ns ns ns
3.3 4.2 6.0 VBSD -0.84 0.73 0.52
6.3 7.3 8.3 V 1.2 1.0 0.76
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Datasheet TLE6280GP
Electrical Characteristics (continued)
Parameter and Conditions
at Tj = -40 ... +150 C, unless otherwise specified and supply voltage range VS = 8 ... 20V; fPWM = 20kHz; VBxx>7.5V
Symbol
Values min typ max
Unit
Diagnosis and Protection Functions Undervoltage warning at ERR @ TJ = -40C @ TJ = +25C @ TJ = +150C Undervoltage shut down of output stage @ TJ = -40C @ TJ = +25C @ TJ = +150C Over-temperature warning11 Hysteresis for over-temperature warning Short circuit protection shut down time delay Short circuit criteria (VDS of Mosfets) @ VMFP=3V12 @ TJ = -40C @ TJ = +25C @ TJ = +150C Factor between VMFP and max. VGXX @ 2V < VMFP < 4V Disable input level Enable input level 13 Disable input hysteresis Error level @ 1.6mA IERR
VBxx-VSxx 8 8 8 VBxx-VSxx 5.5 5.0 4.0 TJ(OV) TJ(OV) tSCP(off) VDS(SCP) 150 7 7.2 6.6 5.6 170 20 11 7.5 7.2 7.2 190 15 9.4 9.3 9.0 10 10 10
V
V
C C s V
VGxxMax/VMFP VMFP(DIS) VMFP(EN) VMFP(DIS) VERR
1.4 --1.67 -2.5 ---
1.85 1.90 1.95 2 --500 --
--2.3 2.27 1.1 --1.0 V V mV V
Shoot through option Shoot through protection activated Shoot through option activated
VMFP VMFP
4.5
--
4 --
V V
11 12
specified by design Periodic short circuit condition will be detected within several cycles, if the duty cycle is more than 10% 13 If the device is enabled, the slope of dU(VMFP)/dt has to be higher than 3.5V/50s
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Datasheet TLE6280GP
Electrical Characteristics (continued)
Parameter and Conditions
at Tj = -40 ... +150 C, unless otherwise specified and supply voltage range VS = 8 ... 20V; fPWM = 20kHz; VBxx>7.5V
Symbol
Values min typ max
Unit
dI /dt limitation Non reaction level for dI/dt limitation (100% gate driver capability) @ VDIDT>0V Non reaction level for dI/dt limitation (100% gate driver capability) @ VDIDT<0V Max. VGxx at full reaction level for dI/dt limitation @ VDIDT = -5V @ TJ = -40C @ TJ = +25C @ TJ = +150C Min. falltime at full reaction level for dI/dt limitation @ VDIDT = +5V @ TJ = -40C @ TJ = +25C @ TJ = +150C Impedance of DIDT Pin to GND 10kHzVDIDT VDIDT VGxx(DIDT)
2 --
---
--2
V V V
---tfall (DIDT) 20 20 20 ZDIDT
1.9 2.3 3.4
3.0 3.0 4.2 s
65 68 70 60
---
Default status of input pins: To assure a defined status of all input pins in case of disconnection, these pins are internally secured by pull-up or pull-down current sources with approx. 10A. The following table shows the default status of each input pin. Input pin ILx IHx DIDT DT MFP Default status Low (ext. Mosfet off) High (ext. Mosfet off) Low (no dI/dt limitation) 2s dead time Disable (pull-down)
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Datasheet TLE6280GP
Truth Table
ILx 1 0 1 0 0 1 1 0 0 1 1 0 X X X X X C
IHx 1 0 0 1 0 1 0 1 0 1 0 1 X X X X X C
Input DT D D D D D D D D D D D D D D D D D D
MFP >2.5V >2.5V 2.5-4.0V >2.5V >2.5V >2.5V 2.5-4.0V >2.5V >2.5V >2.5V 2.5-4.0V >2.5V >2.5V <1.1V <1.1V <1.1V <1.1V >4.5V
UV 0 0 0 0 1 1 1 1 0 0 0 0 0 0 1 0 1 X
Conditions OT SC 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 1 1 X 0 0 0 0 0 0 0 0 1 X X X X X
GLx 1 0 A 0 0 1 A 0 0 1 A 0 0 0 0 0 0 1
Output GHx 0 1 A 0 1 0 A 0 1 0 A 0 0 0 0 0 0 1
ERR 5V 5V 5V 5V 0V 0V 0V 0V 0V 0V 0V 0V B 5V 0V 0V 0V 0V
A) stays in the output condition prior to the shoot through input command (see also dead time diagrams) B) ERR=0V and stays latched until reset C) All 3 ILx=1 AND all 3 IHx=0 (shoot through command) D) No influence on static results X) Can be 0 or 1 Remark: If 1.1V < VMFP < 2.5V the device is either working normally or is disabled. If 4.0V < VMFP < 4.5V the device is either working normally or will allow shoot through. Definition: In this datasheet a duty cycle of 98% means that the GLx pin is 2% of the PWM period in high condition. Remark: Please consider the influence of the dead time for your input duty cycle
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Datasheet TLE6280GP
Dead time diagrams:
ILx+IHx
90%VGHx
GHx tDT + tP(IHN) GLx
90%VGLx
10%VGHx
tP(IHF)
tP(ILF)
tDT + tP(ILN)
10%VGLx
t
Fig. 6: Dead time generation when IHx and ILx are tied together
t < tDT IHx ILx GHx tDT + tP(IHN) GLx tP(ILF)
t > tDT
tP(IHF)
tDT
tP(ILN) t
Fig. 7: Dead time generation when IHx and ILx are seperated
IHx ILx
GHx tDT + tP(IHN) GLx
90%VGLx
tP(IHF)
tP(ILF)
tDT + tP(ILN) t
Fig. 8: Dead time gereration and shoot through protection
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Datasheet TLE6280GP
Typ. dead time generation
Parameter: TJunction
5 4,5 4 3,5 3
25C
2,5 2 1,5 1 0,5 0 0 100 200 300 400 500 600 700 800 900 1000
150C -40C
R DT [kOhm]
Fig. 9: Typ. dead time internal generated
2,5
2
1,5
25C 150C -40C
1
0,5
0 0 10 20 30 40 50 60 70 80 90 100
R DT [kOhm]
Fig. 10: Typ. dead time internal generated - detail
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Datasheet TLE6280GP
Typ. undervoltage shut down level
7,5
7
6,5
6
5,5
5 -40 -20 0 20 40 60 80 100 120 140
Temperature [C]
Fig. 11: Typ. undervoltage shut down (Voltage of bootstrap capacitors)
Typ. Current consumption of output stage
Conditions: Parameter: Vs=12V; measured with V(BHx=12V) and potentiometer between SHx and GND MFP voltage / TJunction
1,8 1,6 1,4 1,2 1 0,8 0,6 0,4 0,2 0 5 6 7 8 9 10 11
2V 150C 4V 150C 5V 150C 2V 25C 4V 25C 5V 25C 2V -40C 4V -40C 5V -40C
V(Bxx)-V(Sxx) [V]
Fig. 12: Leakage current of driver output stages measured as current out of SH Pin to GND
Remark: The leakage current of the driver output stage is taken from the bootstrap capacitors CBX. When an external high-side Mosfet is switched on, it is impossible to replace this current. The capacitor will be discharged as long as this Mosfet stays on. The time until this output stage reaches the undervoltage shut-down can be determined by the size of the capacitor, the initial capacitor voltage, the leakage current taken out of this capacitor and the undervoltage lock-out level.
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Datasheet TLE6280GP
Typ. Boostrap voltage vs. Duty Cycle
Conditions: Parameter: Mosfet: 6x SPB80N04S2-04; fPWM=20kHz, Vs=9V Charge pump capacitor CCP / Bootstrap capacitor CBX
14
12
10
8
6
1.5F / 220nF 3F / 440nF 4.5F / 660nF
4
2
0 0 10 20 30 40 50 60 70 80 90 100
Duty Cycle [%]
Fig. 13: Typ. bootstrap voltage V(BHx)-V(SHx); duty cycle of 1 half-bridge = 50%; duty cycle of the other 2 halfbridges variable
14
12
10
8
6
1.5F / 220nF 3F / 440nF 4.5F / 660nF
4
2
0 0 10 20 30 40 50 60 70 80 90 100
Duty Cycle [%]
Fig. 14: Typ. bootstrap voltage V(BHx)-V(SHx); duty cycle of 1 half-bridge = 0%; duty cycle of the other 2 halfbridges variable
Remark: The reachable duty cycle depends on the used PWM patterns. To achieve an even higher duty cycle, run it for some periods and reduce the duty cycle only for 1 period down to 90% to recharge the bootstrap capacitors.
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Datasheet TLE6280GP
Typ. Short circuit detection level
Conditions: Parameter: Vs=12V TJunction
3 2,8
Short circuit detection level [V]
2,6 2,4 2,2 2 1,8 1,6 1,4 1,2 1 2,5 3 3,5 4 4,5 5
+150C +25C -40C
MFP voltage [V]
Fig. 15: Short circuit detection level
Typ. Gate voltage limitation during short circuit detection
Conditions: Vs=12V; Load at output: capacitor with 22nF; V(SHx) = GND; V(SLx) = GND; For HS (high-side output); Short happens during on phase V(VDH)-V(SHx)=3V; For LS (low-side output); Short happens during on phase V(SHx)-V(SLx)=3V; TJunction; high-side (HS) or low-side (LS) output
Parameter:
2,20
2,15
2,10
2,05
2,00
1,95
HS 150C HS 25C HS -40C LS 150C LS 25C LS -40C
1,90
1,85
1,80 2 2,2 2,4 2,6 2,8 3 3,2 3,4 3,6 3,8 4
V(MFP) [V]
Fig. 16: Factor between reduced gate voltage V(Gxx) in case of short circuit and the voltage at the MFP pin
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Datasheet TLE6280GP
Typ. Switching behavior
Conditions: Vs=12V; Vbb=12V; ILoad = 10A; VMFP=3.75V; RGate =1; RDT=10k; CBxx =220nF; CCP=1,5F; one SPB80N04 S2-04 per output with QG(total) = 135nC; Measured: V(DS)
20 18 16 14 12 10 8 6 4 2 0 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1
V(GS) V(DS)
time [s]
Fig. 17: typ. fall-time at 25C
14
12
10
8
6
V(GS) V(DS)
4
2
0 0 0,2 0,4 0,6 0,8 1 1,2 1,4
time [s]
Fig. 18: typ. rise-time at 25C
180 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140
fall time rise time
Temperature Tj [C]
Fig. 19: Rise- and fall-times vs. temperature TJ
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Datasheet TLE6280GP Package and Ordering Code
Package: P-DSO36-12 (all dimensions in mm)
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Datasheet TLE6280GP
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2004-03-31

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